Texas Instruments NexFET N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 17,20
€ 3,44 Each (In a Pack of 5) (bez PDV-a)
€ 20,12
€ 4,025 Each (In a Pack of 5) (s PDV-om)
5
€ 17,20
€ 3,44 Each (In a Pack of 5) (bez PDV-a)
€ 20,12
€ 4,025 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 20 | € 3,44 | € 17,20 |
| 25 - 45 | € 3,32 | € 16,60 |
| 50 - 120 | € 3,11 | € 15,55 |
| 125 - 245 | € 2,92 | € 14,60 |
| 250+ | € 2,88 | € 14,40 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda