Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
273 A
Maximum Drain Source Voltage
80 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 16,22
Each (bez PDV-a)
KM 18,98
Each (s PDV-om)
1
KM 16,22
Each (bez PDV-a)
KM 18,98
Each (s PDV-om)
1
Kupujte na veliko
količina | Jedinična cijena |
---|---|
1 - 4 | KM 16,22 |
5 - 9 | KM 15,57 |
10 - 24 | KM 14,60 |
25 - 49 | KM 13,73 |
50+ | KM 13,52 |
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
273 A
Maximum Drain Source Voltage
80 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu