Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Philippines
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 3,634
Each (In a Tube of 50) (bez PDV-a)
KM 4,252
Each (In a Tube of 50) (s PDV-om)
50
KM 3,634
Each (In a Tube of 50) (bez PDV-a)
KM 4,252
Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 3,634 | KM 181,68 |
100 - 200 | KM 3,331 | KM 166,54 |
250 - 450 | KM 3,266 | KM 163,30 |
500 - 700 | KM 3,201 | KM 160,05 |
750+ | KM 3,115 | KM 155,73 |
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Philippines
Detalji o proizvodu