Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2390000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si
KM 1.349,50
KM 0,45 Each (On a Reel of 3000) (bez PDV-a)
KM 1.578,92
KM 0,526 Each (On a Reel of 3000) (s PDV-om)
3000
KM 1.349,50
KM 0,45 Each (On a Reel of 3000) (bez PDV-a)
KM 1.578,92
KM 0,526 Each (On a Reel of 3000) (s PDV-om)
3000
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Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2390000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si