Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Zemlja podrijetla
Japan
Detalji o proizvodu
MOSFET Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 6,705
Each (In a Pack of 5) (bez PDV-a)
KM 7,845
Each (In a Pack of 5) (s PDV-om)
5
KM 6,705
Each (In a Pack of 5) (bez PDV-a)
KM 7,845
Each (In a Pack of 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 20 | KM 6,705 | KM 33,52 |
25 - 45 | KM 6,164 | KM 30,82 |
50 - 120 | KM 5,84 | KM 29,20 |
125+ | KM 5,624 | KM 28,12 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Zemlja podrijetla
Japan
Detalji o proizvodu