Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Zemlja podrijetla
Japan
Detalji o proizvodu
MOSFET Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 18,06
KM 3,612 Each (In a Pack of 5) (bez PDV-a)
KM 21,13
KM 4,226 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 18,06
KM 3,612 Each (In a Pack of 5) (bez PDV-a)
KM 21,13
KM 4,226 Each (In a Pack of 5) (s PDV-om)
Standard
5
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 20 | KM 3,612 | KM 18,06 |
25+ | KM 3,115 | KM 15,57 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Zemlja podrijetla
Japan
Detalji o proizvodu