Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Detalji o proizvodu
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,79
Each (In a Pack of 5) (bez PDV-a)
KM 3,264
Each (In a Pack of 5) (s PDV-om)
5
KM 2,79
Each (In a Pack of 5) (bez PDV-a)
KM 3,264
Each (In a Pack of 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 45 | KM 2,79 | KM 13,95 |
50 - 120 | KM 2,574 | KM 12,87 |
125 - 245 | KM 2,552 | KM 12,76 |
250 - 495 | KM 2,422 | KM 12,11 |
500+ | KM 2,293 | KM 11,46 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Detalji o proizvodu