Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.1mm
Forward Diode Voltage
1.2V
Height
0.85mm
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,211
Each (On a Reel of 5000) (bez PDV-a)
KM 1,417
Each (On a Reel of 5000) (s PDV-om)
5000
KM 1,211
Each (On a Reel of 5000) (bez PDV-a)
KM 1,417
Each (On a Reel of 5000) (s PDV-om)
5000
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
5000 - 5000 | KM 1,211 | KM 6.056,12 |
10000+ | KM 1,146 | KM 5.731,68 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.1mm
Forward Diode Voltage
1.2V
Height
0.85mm