Tehnička dokumentacija
Tehnički podaci
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
3.15mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Height
1.07mm
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,887
Each (On a Reel of 3000) (bez PDV-a)
KM 1,038
Each (On a Reel of 3000) (s PDV-om)
3000
KM 0,887
Each (On a Reel of 3000) (bez PDV-a)
KM 1,038
Each (On a Reel of 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
3.15mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Height
1.07mm
Forward Diode Voltage
1.2V
Zemlja podrijetla
China