Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
17 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Width
4.7mm
Maximum Operating Temperature
+150 °C
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
KM 3,44
KM 3,44 Each (bez PDV-a)
KM 4,03
KM 4,03 Each (s PDV-om)
Standard
1
KM 3,44
KM 3,44 Each (bez PDV-a)
KM 4,03
KM 4,03 Each (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena |
---|---|
1 - 9 | KM 3,44 |
10 - 49 | KM 3,15 |
50 - 99 | KM 3,07 |
100 - 249 | KM 2,84 |
250+ | KM 2,76 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
17 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Width
4.7mm
Maximum Operating Temperature
+150 °C
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu