Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 6,92
Each (bez PDV-a)
KM 8,10
Each (s PDV-om)
1
KM 6,92
Each (bez PDV-a)
KM 8,10
Each (s PDV-om)
1
Kupujte na veliko
količina | Jedinična cijena |
---|---|
1 - 9 | KM 6,92 |
10 - 49 | KM 6,16 |
50 - 99 | KM 6,06 |
100 - 249 | KM 5,95 |
250+ | KM 5,73 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Zemlja podrijetla
China
Detalji o proizvodu