Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
15.49mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 4,434
Each (In a Tube of 50) (bez PDV-a)
KM 5,188
Each (In a Tube of 50) (s PDV-om)
50
KM 4,434
Each (In a Tube of 50) (bez PDV-a)
KM 5,188
Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 4,434 | KM 221,70 |
100 - 200 | KM 3,828 | KM 191,42 |
250+ | KM 3,504 | KM 175,19 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
15.49mm
Zemlja podrijetla
China
Detalji o proizvodu