Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Zemlja podrijetla
Philippines
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 3,936
Each (In a Tube of 100) (bez PDV-a)
KM 4,605
Each (In a Tube of 100) (s PDV-om)
100
KM 3,936
Each (In a Tube of 100) (bez PDV-a)
KM 4,605
Each (In a Tube of 100) (s PDV-om)
100
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
100 - 100 | KM 3,936 | KM 393,65 |
200 - 400 | KM 3,915 | KM 391,48 |
500+ | KM 3,872 | KM 387,16 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Zemlja podrijetla
Philippines
Detalji o proizvodu