Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 7,246
Each (In a Tube of 50) (bez PDV-a)
KM 8,478
Each (In a Tube of 50) (s PDV-om)
50
KM 7,246
Each (In a Tube of 50) (bez PDV-a)
KM 8,478
Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 7,246 | KM 362,29 |
100 - 200 | KM 5,84 | KM 291,99 |
250+ | KM 5,407 | KM 270,36 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu