Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
RSD 24.821
RSD 496,413 komad (isporucivo u Tubi) (bez PDV-a)
RSD 29.785
RSD 595,696 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
50
RSD 24.821
RSD 496,413 komad (isporucivo u Tubi) (bez PDV-a)
RSD 29.785
RSD 595,696 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po cev |
---|---|---|
50 - 120 | RSD 496,413 | RSD 2.482 |
125+ | RSD 489,881 | RSD 2.449 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Zemlja podrijetla
China
Detalji o proizvodu