Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.82mm
Detalji o proizvodu
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
RSD 3.063
RSD 612,678 komadno (u pakovanju od 5) (bez PDV-a)
RSD 3.676
RSD 735,214 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 3.063
RSD 612,678 komadno (u pakovanju od 5) (bez PDV-a)
RSD 3.676
RSD 735,214 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 612,678 | RSD 3.063 |
25 - 45 | RSD 529,071 | RSD 2.645 |
50 - 120 | RSD 485,962 | RSD 2.430 |
125 - 245 | RSD 471,592 | RSD 2.358 |
250+ | RSD 455,916 | RSD 2.280 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.82mm
Detalji o proizvodu