Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 10,057
Each (In a Tube of 25) (bez PDV-a)
KM 11,767
Each (In a Tube of 25) (s PDV-om)
25
KM 10,057
Each (In a Tube of 25) (bez PDV-a)
KM 11,767
Each (In a Tube of 25) (s PDV-om)
25
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
25 - 25 | KM 10,057 | KM 251,44 |
50 - 100 | KM 9,625 | KM 240,62 |
125+ | KM 9,084 | KM 227,10 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu