Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalji o proizvodu
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,406
Each (In a Pack of 20) (bez PDV-a)
KM 1,645
Each (In a Pack of 20) (s PDV-om)
20
KM 1,406
Each (In a Pack of 20) (bez PDV-a)
KM 1,645
Each (In a Pack of 20) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
20 - 180 | KM 1,406 | KM 28,12 |
200 - 480 | KM 1,341 | KM 26,82 |
500 - 980 | KM 1,276 | KM 25,52 |
1000 - 1980 | KM 1,233 | KM 24,66 |
2000+ | KM 1,211 | KM 24,22 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalji o proizvodu