Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
22 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,471
Each (Supplied on a Reel) (bez PDV-a)
KM 1,721
Each (Supplied on a Reel) (s PDV-om)
20
KM 1,471
Each (Supplied on a Reel) (bez PDV-a)
KM 1,721
Each (Supplied on a Reel) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
20 - 180 | KM 1,471 | KM 29,42 |
200 - 480 | KM 1,146 | KM 22,93 |
500 - 980 | KM 1,103 | KM 22,06 |
1000 - 1980 | KM 0,973 | KM 19,47 |
2000+ | KM 0,887 | KM 17,74 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
22 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Zemlja podrijetla
China
Detalji o proizvodu