Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,952
Each (Supplied on a Reel) (bez PDV-a)
KM 1,114
Each (Supplied on a Reel) (s PDV-om)
50
KM 0,952
Each (Supplied on a Reel) (bez PDV-a)
KM 1,114
Each (Supplied on a Reel) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
50 - 450 | KM 0,952 | KM 47,58 |
500 - 1200 | KM 0,692 | KM 34,61 |
1250 - 2450 | KM 0,562 | KM 28,12 |
2500 - 4950 | KM 0,541 | KM 27,04 |
5000+ | KM 0,433 | KM 21,63 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu