Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
14 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,211
Each (Supplied on a Reel) (bez PDV-a)
KM 1,417
Each (Supplied on a Reel) (s PDV-om)
20
KM 1,211
Each (Supplied on a Reel) (bez PDV-a)
KM 1,417
Each (Supplied on a Reel) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
20 - 180 | KM 1,211 | KM 24,22 |
200 - 480 | KM 0,93 | KM 18,60 |
500 - 980 | KM 0,908 | KM 18,17 |
1000 - 1980 | KM 0,80 | KM 16,01 |
2000+ | KM 0,714 | KM 14,28 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
14 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu