Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,752
Each (Supplied on a Reel) (bez PDV-a)
KM 2,05
Each (Supplied on a Reel) (s PDV-om)
20
KM 1,752
Each (Supplied on a Reel) (bez PDV-a)
KM 2,05
Each (Supplied on a Reel) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
20 - 180 | KM 1,752 | KM 35,04 |
200 - 480 | KM 1,428 | KM 28,55 |
500 - 980 | KM 1,406 | KM 28,12 |
1000 - 1980 | KM 1,254 | KM 25,09 |
2000+ | KM 1,081 | KM 21,63 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Zemlja podrijetla
China
Detalji o proizvodu