Hex SiC N-Channel MOSFET, 87 A, 1200 V, 28-Pin Six Pack Wolfspeed CCS050M12CM2

RS kataloški broj:: 916-3891robna marka: WolfspeedProizvođački broj:: CCS050M12CM2
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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

87 A

Maximum Drain Source Voltage

1200 V

Package Type

Six Pack

Mounting Type

Screw Mount

Pin Count

28

Maximum Drain Source Resistance

63 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

312 W

Transistor Configuration

3 Phase

Maximum Gate Source Voltage

-10 V, +25 V

Number of Elements per Chip

6

Maximum Operating Temperature

+150 °C

Length

108mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

47mm

Transistor Material

SiC

Forward Diode Voltage

2.3V

Height

17mm

Detalji o proizvodu

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

MOSFET Transistors, Wolfspeed

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P.O.A.

Hex SiC N-Channel MOSFET, 87 A, 1200 V, 28-Pin Six Pack Wolfspeed CCS050M12CM2

P.O.A.

Hex SiC N-Channel MOSFET, 87 A, 1200 V, 28-Pin Six Pack Wolfspeed CCS050M12CM2
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

87 A

Maximum Drain Source Voltage

1200 V

Package Type

Six Pack

Mounting Type

Screw Mount

Pin Count

28

Maximum Drain Source Resistance

63 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

312 W

Transistor Configuration

3 Phase

Maximum Gate Source Voltage

-10 V, +25 V

Number of Elements per Chip

6

Maximum Operating Temperature

+150 °C

Length

108mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

47mm

Transistor Material

SiC

Forward Diode Voltage

2.3V

Height

17mm

Detalji o proizvodu

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

MOSFET Transistors, Wolfspeed

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više