Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
80 V
Package Type
TDSON
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
66 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.8 nC @ 10 V
Number of Elements per Chip
1
Width
6.1mm
Height
1.1mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Proverite ponovno kasnije.
RSD 58,786
komad (u Reel od 5000) (bez PDV-a)
RSD 70,543
komad (u Reel od 5000) (s PDV-om)
5000
RSD 58,786
komad (u Reel od 5000) (bez PDV-a)
RSD 70,543
komad (u Reel od 5000) (s PDV-om)
5000
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
80 V
Package Type
TDSON
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
66 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.8 nC @ 10 V
Number of Elements per Chip
1
Width
6.1mm
Height
1.1mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.