Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.66mm
Typical Gate Charge @ Vgs
56 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Height
9.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Mexico
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 3,006
Each (In a Tube of 50) (bez PDV-a)
KM 3,517
Each (In a Tube of 50) (s PDV-om)
50
KM 3,006
Each (In a Tube of 50) (bez PDV-a)
KM 3,517
Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 3,006 | KM 150,32 |
100 - 200 | KM 2,552 | KM 127,61 |
250 - 450 | KM 2,466 | KM 123,29 |
500 - 1200 | KM 2,422 | KM 121,12 |
1250+ | KM 2,293 | KM 114,63 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.66mm
Typical Gate Charge @ Vgs
56 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Height
9.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Mexico
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.