Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
120 mA
Maximum Drain Source Voltage
350 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,79
Each (Supplied in a Bag) (bez PDV-a)
KM 3,264
Each (Supplied in a Bag) (s PDV-om)
10
KM 2,79
Each (Supplied in a Bag) (bez PDV-a)
KM 3,264
Each (Supplied in a Bag) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cijena | Po kesa |
---|---|---|
10 - 20 | KM 2,79 | KM 27,90 |
30 - 90 | KM 2,704 | KM 27,04 |
100+ | KM 2,552 | KM 25,52 |
Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
120 mA
Maximum Drain Source Voltage
350 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.