Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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KM 1,125
Each (In a Pack of 10) (bez PDV-a)
KM 1,316
Each (In a Pack of 10) (s PDV-om)
Standard
10
KM 1,125
Each (In a Pack of 10) (bez PDV-a)
KM 1,316
Each (In a Pack of 10) (s PDV-om)
Standard
10
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 40 | KM 1,125 | KM 11,25 |
50 - 90 | KM 0,952 | KM 9,52 |
100+ | KM 0,779 | KM 7,79 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.