Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Provjerite ponovno kasnije.
KM 0,411
Each (In a Pack of 100) (bez PDV-a)
KM 0,481
Each (In a Pack of 100) (s PDV-om)
100
KM 0,411
Each (In a Pack of 100) (bez PDV-a)
KM 0,481
Each (In a Pack of 100) (s PDV-om)
100
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
100 - 900 | KM 0,411 | KM 41,10 |
1000 - 2900 | KM 0,303 | KM 30,28 |
3000 - 8900 | KM 0,26 | KM 25,95 |
9000+ | KM 0,238 | KM 23,79 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.