STMicroelectronics MDmesh M2 N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK STB13N60M2
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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KM 166,24
KM 6,65 Each (Supplied on a Reel) (bez PDV-a)
KM 194,50
KM 7,78 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
25
KM 166,24
KM 6,65 Each (Supplied on a Reel) (bez PDV-a)
KM 194,50
KM 7,78 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
25
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | Jedinična cijena | Po kolut |
|---|---|---|
| 25 - 45 | KM 6,65 | KM 33,25 |
| 50 - 120 | KM 6,259 | KM 31,29 |
| 125 - 245 | KM 5,867 | KM 29,34 |
| 250+ | KM 5,77 | KM 28,85 |
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PRIDRUŽITE SE BESPLATNO
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- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
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- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda