N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STMicroelectronics STW77N65M5
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M5
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Typical Gate Charge @ Vgs
185 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 43,45
KM 43,45 Each (bez PDV-a)
KM 50,84
KM 50,84 Each (s PDV-om)
Standard
1
KM 43,45
KM 43,45 Each (bez PDV-a)
KM 50,84
KM 50,84 Each (s PDV-om)
Standard
1
Kupujte na veliko
| količina | Jedinična cijena |
|---|---|
| 1 - 4 | KM 43,45 |
| 5 - 9 | KM 41,85 |
| 10+ | KM 39,26 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M5
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Typical Gate Charge @ Vgs
185 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda