Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Height
0.7mm
Forward Diode Voltage
1.2V
Zemlja podrijetla
Thailand
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KM 0,281
Each (On a Reel of 3000) (bez PDV-a)
KM 0,329
Each (On a Reel of 3000) (s PDV-om)
3000
KM 0,281
Each (On a Reel of 3000) (bez PDV-a)
KM 0,329
Each (On a Reel of 3000) (s PDV-om)
3000
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
3000 - 3000 | KM 0,281 | KM 843,53 |
6000+ | KM 0,26 | KM 778,64 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Height
0.7mm
Forward Diode Voltage
1.2V
Zemlja podrijetla
Thailand