Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-50 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,26
Each (In a Pack of 50) (bez PDV-a)
KM 0,304
Each (In a Pack of 50) (s PDV-om)
Standard
50
KM 0,26
Each (In a Pack of 50) (bez PDV-a)
KM 0,304
Each (In a Pack of 50) (s PDV-om)
Standard
50
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-50 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu