Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

RS kataloški broj:: 827-5344brend: InfineonProizvođački broj:: BSC052N03LSATMA1Distrelec broj artikla: 30341184
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

5.35mm

Length

6.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 2.384

RSD 95,363 komadno (u pakovanju od 25) (bez PDV-a)

RSD 2.861

RSD 114,436 komadno (u pakovanju od 25) (s PDV-om)

Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

25

Dostupno u više komada 25
25RSD 2.384
50RSD 4.768
75RSD 7.152
100RSD 9.536
125RSD 11.920
150RSD 14.305
175RSD 16.689
200RSD 19.073
225RSD 21.457
250RSD 23.841
275RSD 26.225
300RSD 28.609
325RSD 30.993
350RSD 33.377
375RSD 35.761

RSD 2.384

RSD 95,363 komadno (u pakovanju od 25) (bez PDV-a)

RSD 2.861

RSD 114,436 komadno (u pakovanju od 25) (s PDV-om)

Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

25

Dostupno u više komada 25
25RSD 2.384
50RSD 4.768
75RSD 7.152
100RSD 9.536
125RSD 11.920
150RSD 14.305
175RSD 16.689
200RSD 19.073
225RSD 21.457
250RSD 23.841
275RSD 26.225
300RSD 28.609
325RSD 30.993
350RSD 33.377
375RSD 35.761

Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

5.35mm

Length

6.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više