Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
1.2 kA
Maximum Drain Source Voltage
1700 V
Series
XHP
Package Type
Tray
Mounting Type
Screw Mount
Channel Mode
Depletion
Number of Elements per Chip
2
Transistor Material
SiC
Zemlja podrijetla
Germany
Informacije o stanju skladišta trenutno nisu dostupne.
Cijena na upit
Infineon XHP Dual SiC Dual N-Channel MOSFET, 1.2 kA, 1700 V Depletion Tray FF1200XTR17T2P5BPSA1
1
Cijena na upit
Infineon XHP Dual SiC Dual N-Channel MOSFET, 1.2 kA, 1700 V Depletion Tray FF1200XTR17T2P5BPSA1
Informacije o stanju skladišta trenutno nisu dostupne.
1
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
1.2 kA
Maximum Drain Source Voltage
1700 V
Series
XHP
Package Type
Tray
Mounting Type
Screw Mount
Channel Mode
Depletion
Number of Elements per Chip
2
Transistor Material
SiC
Zemlja podrijetla
Germany