Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
54 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
215 W
Package Type
EASY2B
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Switching Speed
1MHz
Transistor Configuration
3 Phase
Dimensions
56.7 x 48 x 12mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
RSD 161.504
RSD 10.766,928 komad (u kutiji od 15) (bez PDV-a)
RSD 193.805
RSD 12.920,314 komad (u kutiji od 15) (s PDV-om)
15
RSD 161.504
RSD 10.766,928 komad (u kutiji od 15) (bez PDV-a)
RSD 193.805
RSD 12.920,314 komad (u kutiji od 15) (s PDV-om)
15
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Proverite ponovno kasnije.
količina | Jedinična cena | Po kutija |
---|---|---|
15 - 15 | RSD 10.766,928 | RSD 161.504 |
30+ | RSD 10.375,024 | RSD 155.625 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
54 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
215 W
Package Type
EASY2B
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Switching Speed
1MHz
Transistor Configuration
3 Phase
Dimensions
56.7 x 48 x 12mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.