Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 60 V, 8-Pin HSOF-8 IPT007N06NATMA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
10.1mm
Length
10.58mm
Typical Gate Charge @ Vgs
216 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 1.465.724
RSD 732,862 komad (u Reel od 2000) (bez PDV-a)
RSD 1.758.868
RSD 879,434 komad (u Reel od 2000) (s PDV-om)
2000
RSD 1.465.724
RSD 732,862 komad (u Reel od 2000) (bez PDV-a)
RSD 1.758.868
RSD 879,434 komad (u Reel od 2000) (s PDV-om)
2000
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Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
10.1mm
Length
10.58mm
Typical Gate Charge @ Vgs
216 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda