Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF

RS kataloški broj:: 130-0948Pbrend: InfineonProizvođački broj:: IRF6648TRPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

60 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.5mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Detalji o proizvodu

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 6.924

RSD 346,182 komad (isporučivo u Reel) (bez PDV-a)

RSD 8.308

RSD 415,418 komad (isporučivo u Reel) (s PDV-om)

Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 2
20RSD 6.924
22RSD 7.616
24RSD 8.308
26RSD 9.001
28RSD 9.693
30RSD 10.385
32RSD 11.078
34RSD 11.770
36RSD 12.463
38RSD 13.155
40RSD 13.847
42RSD 14.540
44RSD 15.232
46RSD 15.924
48RSD 16.617

RSD 6.924

RSD 346,182 komad (isporučivo u Reel) (bez PDV-a)

RSD 8.308

RSD 415,418 komad (isporučivo u Reel) (s PDV-om)

Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 2
20RSD 6.924
22RSD 7.616
24RSD 8.308
26RSD 9.001
28RSD 9.693
30RSD 10.385
32RSD 11.078
34RSD 11.770
36RSD 12.463
38RSD 13.155
40RSD 13.847
42RSD 14.540
44RSD 15.232
46RSD 15.924
48RSD 16.617

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo kolut
20 - 48RSD 346,182RSD 692
50 - 98RSD 333,119RSD 666
100 - 198RSD 326,587RSD 653
200+RSD 313,524RSD 627

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

60 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.5mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Detalji o proizvodu

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više