onsemi PowerTrench P-Channel MOSFET, 7.8 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA510PZ

RS kataloški broj:: 739-6250robna marka: onsemiProizvođački broj:: FDMA510PZ
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

7.8 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

MicroFET 2 x 2

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

19 nC @ 4.5 V

Width

2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2mm

Maximum Operating Temperature

+150 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Cijena na upit

Each (In a Pack of 5) (bez PDV-a)

onsemi PowerTrench P-Channel MOSFET, 7.8 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA510PZ
Odaberite vrstu pakovanja

Cijena na upit

Each (In a Pack of 5) (bez PDV-a)

onsemi PowerTrench P-Channel MOSFET, 7.8 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA510PZ

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

7.8 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

MicroFET 2 x 2

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

19 nC @ 4.5 V

Width

2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2mm

Maximum Operating Temperature

+150 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više