Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
163 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
NVD5C434N
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Detalji o proizvodu
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
KM 18,27
KM 9,134 Each (In a Pack of 2) (bez PDV-a)
KM 21,38
KM 10,687 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 18,27
KM 9,134 Each (In a Pack of 2) (bez PDV-a)
KM 21,38
KM 10,687 Each (In a Pack of 2) (s PDV-om)
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 18 | KM 9,134 | KM 18,27 |
20 - 198 | KM 7,98 | KM 15,96 |
200 - 998 | KM 7,217 | KM 14,43 |
1000+ | KM 6,591 | KM 13,18 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
163 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
NVD5C434N
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Detalji o proizvodu