Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.75mm
Maximum Operating Temperature
+150 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 49,00
€ 4,90 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 57,33
€ 5,73 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
10
€ 49,00
€ 4,90 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 57,33
€ 5,73 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
10
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količina | Jedinična cijena |
---|---|
10 - 99 | € 4,90 |
100 - 499 | € 4,55 |
500 - 999 | € 4,15 |
1000+ | € 3,75 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.75mm
Maximum Operating Temperature
+150 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu