N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G
Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.5V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
38.7 W
Package Type
ITO-220
Length
10mm
Height
15mm
Maximum Drain Source Resistance
3 Ω
Typical Gate Charge @ Vgs
20 nC @ 10 V
Proizvođač
Taiwan SemiconductorInformacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
1000
P.O.A.
1000
Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.5V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
38.7 W
Package Type
ITO-220
Length
10mm
Height
15mm
Maximum Drain Source Resistance
3 Ω
Typical Gate Charge @ Vgs
20 nC @ 10 V
Proizvođač
Taiwan Semiconductor