Fuji 6MBi50VA-120-50, M636 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Screw Mount

RS kataloški broj:: 747-1055robna marka: FujiProizvođački broj:: 6MBi50VA-120-50
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Fuji

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

280 W

Package Type

M636

Configuration

3 Phase Bridge

Mounting Type

Screw Mount

Channel Type

N

Pin Count

28

Dimensions

107.5 x 45 x 17mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

IGBT Modules 6-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Fuji 6MBi50VA-120-50, M636 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Screw Mount

1

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3P.O.A.
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5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
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P.O.A.

Fuji 6MBi50VA-120-50, M636 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Screw Mount
Informacije o stanju skladišta trenutno nisu dostupne.

1

Dostupno u više komada 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Fuji

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

280 W

Package Type

M636

Configuration

3 Phase Bridge

Mounting Type

Screw Mount

Channel Type

N

Pin Count

28

Dimensions

107.5 x 45 x 17mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

IGBT Modules 6-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in