N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Width
3.5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.6mm
Detalji o proizvodu
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 51,00
€ 1,02 Each (Supplied on a Reel) (bez PDV-a)
€ 63,75
€ 1,275 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
50
€ 51,00
€ 1,02 Each (Supplied on a Reel) (bez PDV-a)
€ 63,75
€ 1,275 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
50
Kupujte na veliko
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 50 - 120 | € 1,02 | € 5,10 |
| 125 - 245 | € 0,99 | € 4,95 |
| 250 - 495 | € 0,96 | € 4,80 |
| 500+ | € 0,92 | € 4,60 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Width
3.5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.6mm
Detalji o proizvodu
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda