Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3 + Tab
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
0.9V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
+30 V
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
24 W
Width
4.9mm
Series
CoolMOS P7
Package Type
TO-220FP
Length
10.65mm
Height
16.15mm
Maximum Drain Source Resistance
3.1 Ω
Proizvođač
InfineonTypical Gate Charge @ Vgs
10 nC @ 10 V
Zemlja podrijetla
China
Detalji o proizvodu
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Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3 + Tab
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
0.9V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
+30 V
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
24 W
Width
4.9mm
Series
CoolMOS P7
Package Type
TO-220FP
Length
10.65mm
Height
16.15mm
Maximum Drain Source Resistance
3.1 Ω
Proizvođač
InfineonTypical Gate Charge @ Vgs
10 nC @ 10 V
Zemlja podrijetla
China
Detalji o proizvodu