Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Series
IRF3710ZS
Minimum Operating Temperature
-55 °C
Height
4.83mm
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1,25
Each (On a Reel of 800) (bez PDV-a)
€ 1,562
Each (On a Reel of 800) (s PDV-om)
800
€ 1,25
Each (On a Reel of 800) (bez PDV-a)
€ 1,562
Each (On a Reel of 800) (s PDV-om)
800
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
800 - 800 | € 1,25 | € 1.000,00 |
1600+ | € 1,20 | € 960,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Series
IRF3710ZS
Minimum Operating Temperature
-55 °C
Height
4.83mm