N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC Infineon IRFP2907ZPBF

RS kataloški broj:: 688-6976brend: InfineonProizvođački broj:: IRFP2907ZPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

180 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

5.3mm

Transistor Material

Si

Length

15.9mm

Minimum Operating Temperature

-55 °C

Height

20.3mm

Detalji o proizvodu

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 1.045,079

komadno (u pakovanju od 2) (bez PDV-a)

RSD 1.254,095

komadno (u pakovanju od 2) (s PDV-om)

N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC Infineon IRFP2907ZPBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2RSD 2.090
4RSD 4.180
6RSD 6.270
8RSD 8.361
10RSD 10.451
12RSD 12.541
14RSD 14.631
16RSD 16.721
18RSD 18.811
20RSD 17.897
22RSD 19.687
24RSD 21.476
26RSD 23.266
28RSD 25.056
30RSD 26.845

RSD 1.045,079

komadno (u pakovanju od 2) (bez PDV-a)

RSD 1.254,095

komadno (u pakovanju od 2) (s PDV-om)

N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC Infineon IRFP2907ZPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2RSD 2.090
4RSD 4.180
6RSD 6.270
8RSD 8.361
10RSD 10.451
12RSD 12.541
14RSD 14.631
16RSD 16.721
18RSD 18.811
20RSD 17.897
22RSD 19.687
24RSD 21.476
26RSD 23.266
28RSD 25.056
30RSD 26.845

Kupujte na veliko

količinaJedinična cenaPo pakovanje
2 - 18RSD 1.045,079RSD 2.090
20 - 48RSD 894,849RSD 1.790
50 - 98RSD 875,254RSD 1.751
100 - 198RSD 842,595RSD 1.685
200+RSD 816,468RSD 1.633

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PRIDRUŽITE SE BESPLATNO

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design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

180 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

5.3mm

Transistor Material

Si

Length

15.9mm

Minimum Operating Temperature

-55 °C

Height

20.3mm

Detalji o proizvodu

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više