Tehnička dokumentacija
Tehnički podaci
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.13mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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Provjerite ponovno kasnije.
€ 1,41
Each (In a Tube of 10) (bez PDV-a)
€ 1,65
Each (In a Tube of 10) (s PDV-om)
Standard
10
€ 1,41
Each (In a Tube of 10) (bez PDV-a)
€ 1,65
Each (In a Tube of 10) (s PDV-om)
Standard
10
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
10 - 40 | € 1,41 | € 14,10 |
50 - 90 | € 1,32 | € 13,20 |
100 - 240 | € 1,29 | € 12,90 |
250 - 490 | € 1,24 | € 12,40 |
500+ | € 1,18 | € 11,80 |
Tehnička dokumentacija
Tehnički podaci
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.13mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.