Tehnička dokumentacija
Tehnički podaci
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.15mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Height
0.75mm
Series
NVTFS5C658NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
Standard
5
P.O.A.
Standard
5
Tehnička dokumentacija
Tehnički podaci
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.15mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Height
0.75mm
Series
NVTFS5C658NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalji o proizvodu