Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,35
komadno (u pakiranju od 25) (bez PDV-a)
€ 0,438
komadno (u pakiranju od 25) (s PDV-om)
Standard
25
€ 0,35
komadno (u pakiranju od 25) (bez PDV-a)
€ 0,438
komadno (u pakiranju od 25) (s PDV-om)
Standard
25
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
25 - 75 | € 0,35 | € 8,75 |
100 - 225 | € 0,30 | € 7,50 |
250 - 475 | € 0,28 | € 7,00 |
500 - 975 | € 0,25 | € 6,25 |
1000+ | € 0,24 | € 6,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.