Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Width
4.82mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
81 nC @ 10 V
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 14,75
komadno (u pakiranju od 5) (bez PDV-a)
€ 18,438
komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 14,75
komadno (u pakiranju od 5) (bez PDV-a)
€ 18,438
komadno (u pakiranju od 5) (s PDV-om)
Standard
5
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
5 - 5 | € 14,75 | € 73,75 |
10+ | € 13,50 | € 67,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Width
4.82mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
81 nC @ 10 V
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C